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| NPN Silicon AF Transistor High DC current gain q Low collector-emitter saturation voltage q SMBTA 20 Type SMBTA 20 Marking s1C Ordering Code (tape and reel) Q6800-A6477 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation, TS = 71 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VCE0 VEB0 IC ICM IBM Ptot Tj Tstg Values 40 4 100 200 200 330 150 - 65 ... + 150 Unit V mA mW C 310 240 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBTA 20 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA Emitter-base breakdown voltage IE = 100 A Collector-base cutoff current VCB = 30 V VCB = 30 V, TA = 150 C Emitter-base cutoff current VEB = 4 V DC current gain IC = 5 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Output capacitance VCB = 10 V, f = 1 MHz fT Cobo 125 - - - - 4 MHz pF V(BR)CE0 V(BR)EB0 ICB0 - - IEB0 hFE VCEsat - 40 - - - - - - 100 20 20 400 0.25 nA A Values typ. max. Unit 40 4 - - - - V nA - V 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 SMBTA 20 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) f = 1 MHz Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V, f = 100 MHz Semiconductor Group 3 SMBTA 20 Base-emitter saturation voltage IC = f (VBE sat), hFE = 20 Collector-emitter saturation voltage IC = f (VCE sat), hFE = 20 Collector cutoff current ICB0 = f (TA) VCB = 30 V DC current gain hFE = f (IC) VCE = 1 V Semiconductor Group 4 |
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